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| TK12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK12J60U Switching Regulator Applications 15.9 MAX. Unit: mm 3.2 0.2 1.0 4.5 9.0 2.0 3.3 MAX. 2.0 0.3 Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 30 12 24 144 69 12 14 150 -55 to 150 Unit V V A W mJ A mJ C C 1.0 0.3 0.25 5.45 0.2 4.8 MAX. 2.8 1 2 3 5.45 0.2 1.8 MAX. 0.3 0.1 Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range (Note 3) 1. Gate 2. Drain(heat sink) 3. Source JEDEC JEITA TOSHIBA 0.6 SC-65 2-16C1B Weight : 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.868 50 Unit 2 C/W C/W Note 1: Please use devices on conditions that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 0.84 mH, RG = 25 , IAR = 12 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 20.5 0.5 Absolute Maximum Ratings (Ta = 25C) 2.0 20.0 0.3 * * * * Low drain-source ON resistance: RDS (ON) = 0.36 (typ.) High forward transfer admittance: Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) 3 1 2008-06-11 TK12J60U Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 12 A Duty 1%, tw = 10 s Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 0V 50 ID = 6A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 6 A VDS = 10 V, ID = 6 A Min 600 3.0 2.0 Typ. 0.36 7.0 720 55 1700 30 60 8 75 14 8.5 5.5 Max 1 100 5.0 0.4 pF Unit A A V V S ns RL = 50 VDD 300 V nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 12 A, VGS = 0 V IDR = 12 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 380 5.3 Max 12 24 -1.7 Unit A A V ns C Marking TOSHIBA K12J60U Part No. (or abbreviation code) Lot No. A line indicates Lead (Pb)-Free 2 2008-06-11 TK12J60U ID - VDS 10 Common source Tc = 25C Pulse test 20 8 10 7.5 7 16 10 ID - VDS 8 Common source Tc = 25C Pulse test 7.5 12 7 8 6.5 4 VGS = 6 V 0 0 8 (A) ID 6 Drain current 4 6 2 VGS = 5.5 V 0 0 1 2 3 4 Drain current ID 6.5 (A) 5 10 20 30 40 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 20 Common source VDS = 20 V Pulse test 10 VDS - VGS Common source Tc = 25C Pulse test 16 (V) 8 (A) ID Drain-source voltage 12 VDS 6 ID = 12A 4 8 100 Drain current 4 25 Ta = -55C 6 2 3 0 0 0 2 4 6 8 10 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID 100 Common source VDS = 10 V Pulse test 10 Common source Tc = 25C Pulse test RDS (ON) - ID 10 Tc = -55C 25 Drain-source ON-resistance RDS (ON) () Forward transfer admittance Yfs (S) 100 1 1 VGS = 10 V 15 0.1 0.1 1 10 100 0.1 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 3 2008-06-11 TK12J60U RDS (ON) - Tc 1.2 IDR - VDS 100 Drain-source ON-resistance RDS (ON) () 1 IDR (A) Common source VGS = 10 V Pulse test Common source Tc = 25C Pulse test 0.8 0.6 6 ID = 3 A Drain reverse current 12 10 10 1 5 3 1 VGS = 0 V 0.4 0.2 0 -80 -40 0 40 80 120 160 0.1 0 -0.3 -0.6 -0.9 -1.2 Case temperature Tc (C) Drain-source voltage VDS (V) C - VDS 10000 5 Vth - Tc Vth (V) Gate threshold voltage (pF) 4 1000 Ciss Coss 3 Capacitance C 100 2 10 1 0.1 Common source VGS = 0 V f = 1 MHz Tc = 25C 1 10 Crss 100 Common source 1V DS = 10 V ID = 1 mA Pulse test 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 200 500 Dynamic input/output characteristics 20 Common source ID = 12 A Tc = 25C Pulse test 16 200 300 VDD = 100V 200 VGS 100 4 400 8 12 (W) (V) PD VDS 160 400 VDS Drain power dissipation Drain-source voltage 80 40 0 0 40 80 120 160 0 0 4 8 12 16 0 20 Case temperature Tc (C) Total gate charge Qg (nC) 4 2008-06-11 Gate-source voltage 120 VGS (V) TK12J60U rth - tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 PDM Single pulse 0.02 0.01 t T Duty = t/T Rth (ch-c) = 0.868C/W 100 1 10 100 1 10 0.1 0.05 0.01 10 Pulse width tw (s) Safe operating area 100 100 ID max (Pulse) * ID max (Continuous) 100 s * 1 ms * EAS - Tch EAS (mJ) Avalanche energy 10 80 (A) 1 DC operation Tc = 25C Drain current ID 60 40 0.1 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.001 0.1 1 10 20 0.01 VDSS max 100 1000 0 25 50 75 100 125 150 Channel temperature (initial) Tch (C) Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS WAVEFORM TEST CIRCUIT RG = 25 VDD = 90 V, L = 0.84mH AS = 1 B VDSS L I2 B 2 VDSS - VDD 5 2008-06-11 TK12J60U RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2008-06-11 |
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